Lateral p-n Junctions: an Original Concept in Optoelectronic
Devices
Pablo O. VACCARO
Lateral p-n junctions can be formed in a GaAs layer with silicon
impurities grown by molecular-beam epitaxy on a patterned GaAs (311) A-oriented
substrate. Lateral p-n junctions have particular properties (i.e., small junction
area, coplanar contact geometry, in-plane carrier transport in multilayer structures,
etc.) that are promising for applications in new optoelectronic devices. Here
we demonstrated light-emitting diodes, a vertical-cavity surface-emitting laser,
and a photodiode fabricated using lateral p-n junctions.
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