奈良重俊
Electronic structures of GaAs -AlAs superlattices
Abstract:This is the report which discusses the electronic band structure of microscopic
superlatteces with use of an improved tight binding method developed by the
author, especially, in GaAs - AlAs system of both (100) and (111) directionsis.
The dispersion relation is calculated and the effect of spin-orbitinteraction to the
states at the top of valence band is discussed in detail. The author predict the
anomaly in the optical polarization associated with the absorption or emission of
light in (100) and (111) superlattices depending on the atomic layer number
combinations (m,n) in the (GaAs)m/(AlAs)n.