参考文献

[1] H. Ohnishi, M. Hirai, K. Fujita, and T. Watanabe,“Lateral tunneling devices on GaAs(111)A and(311)A patterned substrates grown by MBE using only silicon dopant”, Jpn. J. Appl. Phys. 35, 1168(1996).

[2] P. O. Vaccaro, H. Ohnishi, and K. Fujita,“A light emitting device using a lateral junction grown by molecular beam epitaxy on GaAs(311)A-oriented substrates”, Appl. Phys. Lett. 72, 818(1998) .

[3] P. O. Vaccaro, H. Ohnishi, and K. Fujita,“Lateral-junction vertical-cavity surface-emitting laser grown by molecular beam epitaxy on a patterned GaAs(311)A substrate”, Appl. Phys. Lett. 74, 3854(1999) .

[4] P. O. Vaccaro, M. Uwani, T. Ohachi, M. Tani, and M. Kurosawa,“Lateral junction photodetector grown by molecular beam epitaxy on a GaAs(311)A-oriented substrate”, 26th Intl. Symp. Compound Semic., 22-26 August 1999, Berlin, Germany.


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