藤田和久
Molecular Beam Epitaxy Growth on GaAs(n11)A
Substrates and Device Applications
Abstract:Gallium Arsenide (GaAs) is widely used as a material for fabricating devices such as
high mobility transistors and laser diodes. Studies on the growth of GaAs layers have mainly
been carried out using GaAs(100) substrates due to the maturity of (100) substrate technology.
However, it has been reported that GaAs layers grown on GaAs(n11)A(n≤3) substrates
have many advantages such as the amphoteric nature of a Si dopant, a high emission efficiency
and the piezoelectric effect.
In this article, I review techniques for growth on GaAs(n11)A substrates and properties
of epitaxial layers. Furthermore, I also review applications to devices such as tunneling transistors
and laser diodes.
Keywords: Molecular beam epitaxy; GaAs(111)A; Si-doping; Piezoelectric effect;
Nanostructure